High-temperature exposure 300°C control supporting specimens with high heat resistance, The power semiconductors required for power conversion circuits in the power supply control of home appliances and motor control of hybrid vehicles for high efficiency use of electrical energy are changing from silicon to silicon carbide (SiC). Silicon carbide, with its low power loss, pressure resistance, and high thermal conductivity, is being heralded as the next-generation power semiconductor. These next-generation power semiconductors are required to be heat resistant to high-temperature stress resulting from high-capacity current and therefore, ESPEC offers thermal shock chambers with temperature control up to 300°C.
Features:
Perform two-zone and three-zone tests without auxiliary cooling.
Fixed test chamber design provides easy cable wiring for test measurements and voltage application. (TSA series)
Equipped with an automatic safety door lock function that automatically locks the door and prevents opening when the internal chamber temperature is +190°C or higher.
Eco operation can be performed during thermal shock testing from -70 to +200°C, thereby reducing power consumption by up to 35%.
Power consumption can be further economized during tests with multiple cycles and long exposure time.
